发明名称 Reversible low-energy data storage in phase change memory
摘要 A phase change memory (PCM) device utilizes low energy pulses to write data to PCM storage elements (cells). Methods, devices and systems are described that use low energy reset pulses to reset cells that have been previously set using a method that keeps a portion of the PCM cells in an amorphous phase. The reset is reversible by utilizing a low energy set pulse.
申请公布号 US8437182(B2) 申请公布日期 2013.05.07
申请号 US12958502 申请日期 2010.12.02
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分类号 G11C0011/000009 主分类号 G11C0011/000009
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