| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the characteristics of a semiconductor device (a semiconductor device having a nonvolatile memory). <P>SOLUTION: The semiconductor device has an insulating film 3 formed between a control gate electrode CG and a semiconductor substrate, and an insulating film 5 formed between a memory gate electrode MG and the semiconductor substrate and between the control gate electrode CG and the memory gate electrode MG, and having a charge storage part internally. The insulating film 5 has a first film 5A, a second film 5N becoming a charge storage part placed on the first film 5A, and a third film 5B placed on the second film 5N. The third film 5B has a sidewall film 5s located between the control gate electrode CG and the memory gate electrode MG, and a deposit film 5d located between the memory gate electrode MG and the semiconductor substrate. According to the arrangement, distance D1 between upper face and lower face at the corner of the insulating film 5 can be increased, and concentration of electric field can be relaxed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
