| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means for efficiently using a carrier generated by light irradiation without patterning metal pieces on a semiconductor surface. <P>SOLUTION: There is provided an energy conversion device including a hetero-junction semiconductor in which a first semiconductor and a second semiconductor are joined and a two-dimensional hole gas layer is formed on a joining interface at the first semiconductor side and the thickness of the second semiconductor is not larger than 30 nm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
