| 摘要 |
<p>PURPOSE: A photoresist composition is provided to have high resolution which is suitable for KrF excimer laser lithography, ArF excimer laser lithography, EUV lithography, and EB lithography. CONSTITUTION: A photoresist composition comprises a compound represented by chemical formula 1 and a salt represented by chemical formula B1. A photoresist composition additionally includes a quencher. A manufacturing method of a photoresist pattern comprises a step of spreading the photoresist composition on a substrate; a step of forming a photoresist film by drying the substrate; a step of exposing the photoresist film under radiation ray; a step of baking the exposed photoresist film; and a step of forming a photoresist pattern by developing the baked photoresist film.</p> |
