| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor device that has a transistor using an oxide semiconductor. <P>SOLUTION: In a semiconductor device provided on a glass substrate and having a staggered-type transistor of a bottom gate structure, a gate insulating film, in which a first gate insulating film and a second gate insulating film having different compositions are sequentially stacked, is provided on a gate electrode layer. Or, in the staggered-type transistor of the bottom gate structure, a protective insulating film is provided between the glass substrate and the gate electrode layer. The concentration of a metal element containing in the glass substrate at the interface between the first gate insulating film and the second gate insulating film or at the interface between the gate electrode layer and the gate insulating film is set to be 5×10<SP POS="POST">18</SP>atoms/cm<SP POS="POST">3</SP>or less (preferably 1×10<SP POS="POST">18</SP>atoms/cm<SP POS="POST">3</SP>or less). <P>COPYRIGHT: (C)2013,JPO&INPIT |
