| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of evaluating an etching mask film capable of finding out an etching mask film providing satisfactory etching performance by evaluating both etching resistance in etching a pattern forming film for an etching mask film and etching characteristics in etching the etching mask film itself. <P>SOLUTION: With regard to an etching mask film of a photomask blank which comprises a transparent substrate, a pattern forming film for forming a photomask pattern disposed on the transparent substrate, and an etching mask film used as an etching mask of the pattern forming film disposed on the pattern forming film, performance is evaluated by measuring an etching clear time (C1) under an etching condition applied to the pattern forming film in forming a photomask pattern and an etching clear time (C2) under an etching condition applied to the etching mask film in forming an etching mask pattern and computing a clear time ratio (C1/C2) between the two. The evaluation method enables selection of an etching mask film providing satisfactory etching performance, and by preparing a photomask from a photomask blank using such an etching mask film, a photomask having less pattern defects and having good transfer property of a photomask pattern to a pattern forming film can be obtained. <P>COPYRIGHT: (C)2013,JPO&INPIT |
