| 摘要 |
<P>PROBLEM TO BE SOLVED: To collectively form holes and slits while achieving microfabrication of the holes. <P>SOLUTION: A semiconductor device manufacturing method comprises: sequentially laminating word lines WL4-WL1 for four layers and sequentially laminating word lines WL5-WL8 for four layers so as to be juxtaposed to the word limes WL4-WL1, respectively; and penetrating the word lines WL5-WL8 with a columnar body MP1 and penetrating the word lines WL1-WL4 with a columnar body MP2 to form a NAND string NS. The word lines WL1-WL8 and select gate electrodes SGD, an SGS have a width periodically varying in a row direction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
