A write head for a magnetic storage device includes a writing tip comprising a magnetic material, a write pulse generator configured to generate a write pulse signal comprising a varying voltage bias between the magnetic storage device and the writing tip. The write pulse signal comprising one or more write pulses effective to tunnel electrons from the writing tip to the magnetic storage device. The data stream generator configured to provide a data stream signal to the writing tip where the data stream signal is operative to vary spin polarity in the electrons from a first polarity to a second polarity.
申请公布号
US2013141818(A1)
申请公布日期
2013.06.06
申请号
US201213693152
申请日期
2012.12.04
申请人
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.