| 摘要 |
A semiconductor device includes: an active region located in an upper portion of a semiconductor substrate; a through-hole electrode penetrating the substrate, and made of a conductor having a thermal expansion coefficient larger than that of a material for the substrate; and a stress buffer region located in the upper portion of the substrate and sandwiched between the through-hole electrode and the active region. The stress buffer region does not penetrate the substrate and includes a stress buffer part made of a material having a thermal expansion coefficient larger than that of the material for the substrate and an untreated region where the stress buffer part is not present. The stress buffer part is located in at least two locations sandwiching the untreated region in a cross section perpendicular to a surface of the substrate and passing through the through-hole electrode and the active region.
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