| 摘要 |
A nonvolatile memory device includes a substrate, a lower electrode formed above said substrate, a second variable resistance layer formed above said lower electrode and comprising a second transitional metal oxide, a first variable resistance layer formed above said second variable resistance layer and comprising a first transitional metal oxide having an oxygen content that is lower than an oxygen content of the second transitional metal oxide, and an upper electrode formed above said first variable resistance layer. A step is formed in an interface between said lower electrode and said second variable resistance layer. The second variable resistance layer is formed covering the step and has a bend above the step.
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