| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a mask blank for EUV lithography (EUVL), in which in-plane nonuniformity of a peak reflectivity in an EUV wavelength range on a multilayer reflective film surface is corrected. <P>SOLUTION: The method of manufacturing a reflective mask blank for EUV lithography (EUVL) includes: a step of forming a multilayer reflective film, which is composed of alternately laminated high-refractive-index layers and low-refractive-index layers and reflects EUV light, on a substrate; a step of determining a peak reflectivity distribution in an EUV wavelength range on the multilayer reflective film surface; a step of locally heating at least a portion of a region having a higher peak reflectivity in the EUV wavelength range than a region having the lowest peak reflectivity in the EUV wavelength range on the basis of the obtained peak reflectivity distribution in the EUV wavelength range on the multilayer reflective film surface, thereby correcting peak reflectivity nonuniformity in the EUV wavelength range on the multilayer reflective film surface so that the requested value related to in-plane uniformity of the peak reflectivity in the EUV wavelength range on the multilayer reflective film surface is within±0.25%; and a step of forming an absorbing film that absorbs EUV light on the multilayer reflective film. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
