| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a bypass capacitor, which can reduce a leakage current and inhibit decrease in capacitance by connecting MOS capacitors in series. <P>SOLUTION: A semiconductor device comprises: a semiconductor substrate; first power wiring VDD arranged above the semiconductor substrate; second power wiring GND arranged in parallel with the first power wiring; an n-type well NW connected to the first power wiring formed on the semiconductor substrate; a p-type well PW connected to the second power wiring; element isolation regions delimiting an active region including a bypass capacitor active region; and a bypass capacitor formed in the bypass capacitor active region and including a capacitor electrode. The capacitor electrode is in an electrically floating state, and formed above a gate insulation film GD which is continuously formed on surfaces of an inner n-type well and an inner p-type well adjacent to each other via a pn junction pn reaching the substrate surface, and covers a whole surface of the bypass capacitor active region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
