发明名称 |
THIN FILM TRANSISTOR HAVING THE OXIDE-SEMICONDUCTOR LAYER AND THE ARRAY SUBSTRATE INCLUDING THE SAME |
摘要 |
<p>PURPOSE: A thin film transistor having an oxide semiconductor layer and an array substrate including the same are provided to improve the charging characteristic of a pixel electrode by reducing the parasitic capacitance due to overlap of a gate electrode, a source, and a drain electrode. CONSTITUTION: An oxide semiconductor layer(120) has a T shape or a rotated T shape. A drain electrode(136) is separated from a source electrode(133). The drain electrode has two U-shaped ends which face each other. The end facing the source electrode is overlapped with the oxide semiconductor layer. One end of the drain electrode is overlapped with the oxide semiconductor layer.</p> |
申请公布号 |
KR20130063102(A) |
申请公布日期 |
2013.06.14 |
申请号 |
KR20110129432 |
申请日期 |
2011.12.06 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
PARK, HEON KWANG;LIM, DONG HUN |
分类号 |
G02F1/136;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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