| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device uniformly distributes nanodot or nanowire to equalize the property of the memory cells. CONSTITUTION: The first assistant pattern (12) is formed. First material layers (14) and second material layers (15) are by turns formed in the sidewall of the first assistant pattern. The first material layers and the second material layers fill up the gap region between the first assistant patterns. The second material layers are removed. A charge storage layer is formed in the region in which the second material layers are removed.</p> |
