THINNER COMPOSITION FOR REMOVING PHOTOSENSITIVE RESIN OR ANTI-REFLECTIVE COATING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE OR THIN FILM TRANSISTOR-LIQUID CRYSTAL DEVICE USING THE SAME

摘要

PURPOSE: Photosensitive resin or thinner composition for removing reflection barrier are provided to have excellent solubility about various photoresist films, bottom antireflective coating (BARC), and under layer and improve coating performance of photoresist by including tetrahydrofurfuryl alcohol, alkyl lactate, or/and propylene glycol alkyl ether under optimal condition. CONSTITUTION: Photosensitive resin or thinner composition for removing reflection barrier comprises tetrahydrofurfuryl alcohol, and more than one selected from alkyl lactate and propylene glycol alkyl ether. The tetrahydrofurfuryl alcohol of 1-50 weight% is included about the total weight of thinner composition. More than one selected from the group consisting of alkyl lactate and propylene glycol alkyl ether are included as 50-99 weight% about the total weight of thinner composition. A manufacturing method of semiconductor device or thin film transistor liquid crystal display device comprises the following steps. Reflection barrier is removed by spraying photosensitive resin or thinner composition for removing reflection barrier on substrate coated with photosensitive resin.