发明名称 POWER MODULE SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a power module substrate which absorbs or relaxes stress generated by heat strain between a ceramic substrate and a power semiconductor element under a high temperature environment thereby reducing problems, such as cracks occurring in portions of the ceramic substrate and the power semiconductor module, located near a joint part between the ceramic substrate and the power semiconductor module, and the joint part and disconnection of the joint part, which are due to the stress.SOLUTION: A substrate includes: a base material 111 mainly containing a ceramic and formed by a dielectric layer; an inner layer electrode 112 embedded in the base material; and a surface electrode formed on a surface of the base material. The surface electrode is formed by multiple columnar conductors 113 partially embedded in the base material and the substrate and a power semiconductor element 114 are joined to each other through the multiple columnar conductors. This structure allows the multiple columnar conductors to absorb and relax stress generated by heat strain between the ceramic substrate and the power semiconductor element under a high temperature environment.
申请公布号 JP2013131603(A) 申请公布日期 2013.07.04
申请号 JP20110279542 申请日期 2011.12.21
申请人 NGK INSULATORS LTD 发明人 TAKEUCHI YUKIHISA;HIRAI TAKAMI;YANO SHINSUKE;NANATAKI TSUTOMU;YAMAGUCHI HIROFUMI
分类号 H01L23/36;H01L23/12 主分类号 H01L23/36
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