发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To ensure a wide wiring region for power supply wiring when the power supply wiring is provided on the same wiring layer with main IO lines.SOLUTION: A semiconductor device comprises: a memory mat on which memory cells are arranged in a matrix; a plurality of sense amplifiers provided in sense amplifier regions adjacent to the memory mat in a Y direction; a plurality of column selection lines extending on the first wiring layer in the Y direction; local IO lines extending on a second wiring layer in an X direction orthogonal to the Y direction; a plurality of main IO lines provided in a third wiring layer at least in the sense amplifier region SAA and extending in the Y direction; and power supply wiring provided in the third wiring layer together with the plurality of main IO lines and extending in the Y direction. The plurality of main IO lines are transferred at the memory mat MAT from the third wiring layer to the first wiring layer and a part of the power supply wiring is provided in a space formed in the third wiring layer by the transfer.
申请公布号 JP2013131615(A) 申请公布日期 2013.07.04
申请号 JP20110279846 申请日期 2011.12.21
申请人 ELPIDA MEMORY INC 发明人 EGAWA HIDEKAZU
分类号 H01L21/8242;G11C11/407;G11C11/4096;H01L27/108 主分类号 H01L21/8242
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