发明名称 |
Semiconductor Device Having a Metal Gate and Fabricating Method Thereof |
摘要 |
The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed on the work function metal layer. The step of forming the top barrier layer includes increasing a concentration of a boundary protection material in the top barrier layer. Lastly, a metal layer is formed on the top barrier layer. The present invention further provides a semiconductor device having a metal gate.
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申请公布号 |
US2013168744(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201213343690 |
申请日期 |
2012.01.04 |
申请人 |
HSU CHI-MAO;HUANG HSIN-FU;LIN CHIN-FU;TSAI MIN-CHUAN;CHEN WEI-YU;CHEN CHIEN-HAO |
发明人 |
HSU CHI-MAO;HUANG HSIN-FU;LIN CHIN-FU;TSAI MIN-CHUAN;CHEN WEI-YU;CHEN CHIEN-HAO |
分类号 |
H01L29/78;H01L21/28 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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