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发明名称
不纯物导入方法、使用其之电子元件及半导体制造装置
摘要
本发明系包含:利用电浆掺杂方法将不纯物导入固态基体之步骤;形成具有降低来自固态基板之光的反射率功能的光反射防止膜之步骤;及透过光照射进行退火之步骤,其中,降低退火时所照射光之反射率,将能量有效导入不纯物所导入之层,提高活性化效率,防止扩散,且降低不纯物所导入之层的薄片电阻(sheet resistance)。
申请公布号
TWI401727
申请公布日期
2013.07.11
申请号
TW094116455
申请日期
2005.05.20
申请人
松下电器产业股份有限公司 日本
发明人
金成国;佐佐木雄一朗;水野文二;冈下胜己;伊藤裕之;奥村智洋;前嶋聪;中山一郎
分类号
H01L21/00
主分类号
H01L21/00
代理机构
代理人
赖经臣 台北市松山区南京东路3段346号11楼
主权项
地址
日本
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