发明名称 PLASMA ETCHING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide plasma etching equipment capable of enhancing uniformity of plasma density.SOLUTION: Plasma etching equipment includes an antenna group 20 including three or more high-frequency antennas concentrically arranged, and a high-frequency power supply RF2 for supplying high-frequency power to the antenna group. The antenna group 20 includes a plurality of forward-direction antennas 21 and 23 connected to the high-frequency power supply RF2 so that flowing directions of currents are the same, and a reverse-direction antenna 22 connected to the high-frequency power supply RF2 so that a direction of a current is reverse to those of the forward-direction antennas. The high-frequency antenna 21 adjacent to the reverse-direction antenna 22 outside the reverse-direction antenna 22 and the high-frequency antenna 23 adjacent to the reverse-direction antenna 22 inside the reverse-direction antenna 22 are the forward-direction antennas 21 and 23, respectively.
申请公布号 JP2013145793(A) 申请公布日期 2013.07.25
申请号 JP20120005183 申请日期 2012.01.13
申请人 ULVAC JAPAN LTD 发明人 MORIGUCHI NAOKI;WATANABE KAZUHIRO;KAMIMURA RYUICHIRO
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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