SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To resolve a temperature distribution caused by an arrangement and thermal conductivity of susceptors and a temperature distribution caused by unevenness in heat generation by a heater to achieve high temperature uniformity in a substrate thereby to perform crystal growth without causing a thickness distribution and non-uniformity in a composition.SOLUTION: In a semiconductor manufacturing apparatus comprising a susceptor on which a substrate is mounted and heating means for heating the susceptor, the susceptor 4 includes two members (first member 41 and second member 43) arranged to form an air gap 45 between the two members. A reflection layer 432 is formed on a surface opposite to the first member 41 of the member 43 (second member) positioned on the side where the substrate is mounted. The reflection layer 432 may be provided on an entire surface of the second member or may be provided in a dispersed manner. The reflection layer 432 has effect for diffusing heat radiated from the first member and can achieve uniformity in heat received by the second member.