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发明名称
在实质上封闭回路方法及系统中之多晶矽的制造
摘要
本发明揭示在实质上封闭回路方法中之多晶矽的制造。该等方法通常包含使自冶金级矽制造之三氯矽烷分解。
申请公布号
TWI403610
申请公布日期
2013.08.01
申请号
TW100135943
申请日期
2011.10.04
申请人
MEMC电子材料公司 美国
发明人
布沙拉普 赛提戍;黄粤;古普塔 普尼特
分类号
C23C16/455;C23C16/42
主分类号
C23C16/455
代理机构
代理人
陈长文 台北市松山区敦化北路201号7楼
主权项
地址
美国
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