| 摘要 |
<p>The method involves depositing a precursor I-III comprising gallium, by electrolysis, on a barrier layer that arrests diffusion of an alkaline element. The alkaline element is deposited on the precursor I-III, where the alkaline element deposit contains sodium and sodium selenide or sodium fluoride. An element VI e.g. selenium, is subjected to heat reaction treatment to obtain an alloy I-III-VIB, where the alkaline element ensures uniform distribution of gallium on thickness of the obtained alloy layer, and the treatment has a temperature rise of about 80 to 120 degrees Celsius. An independent claim is also included for a thin layer of alloy I-III-VI.</p> |
