NITRIDE SEMICONDUCTOR LIGHT-EMITTING TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting transistor which is capable of controlling an emission wavelength by voltage control and operates at a high speed without extremely reducing a current gain.SOLUTION: The nitride semiconductor light-emitting transistor which is made of a nitride semiconductor and has a structure of a pnp double heterojunction bipolar transistor is characterized in that, in an n-type base layer having a lattice constant larger than that of a collector layer, a quantum well layer is inserted closer to the collector layer than the center of the base layer.