发明名称 |
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT WITH A THROUGH-CONTACT AND SEMICONDUCTOR COMPONENT WITH THROUGH-CONTACT |
摘要 |
Through the intermetal dielectric (2) and the semiconductor material of the substrate (1) a contact hole is formed, and a contact area of a connection metal plane (3) that faces the substrate is exposed in the contact hole. A metallization (11) is applied, which forms a connection contact (12) on the contact area, a through-contact (13) in the contact hole and a connection contact (20) on a contact area facing away from the substrate and/or on a vertical conductive connection (15) of the upper metal plane (24).
|
申请公布号 |
US2013221539(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201113820998 |
申请日期 |
2011.08.09 |
申请人 |
KRAFT JOCHEN;JESSENIG STEFAN;KOPPITSCH GUENTHER;SCHRANK FRANZ;TEVA JORDI;LOEFFLER BERNHARD;SIEGERT JOERG;AMS AG |
发明人 |
KRAFT JOCHEN;JESSENIG STEFAN;KOPPITSCH GUENTHER;SCHRANK FRANZ;TEVA JORDI;LOEFFLER BERNHARD;SIEGERT JOERG |
分类号 |
H01L23/48;H01L21/48 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|