发明名称 SUBSTRATE PLACEMENT BASE AND PLASMA ETCHING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate placement base which prevents the occurence of leaking of an atmosphere and the deterioration of in-plane uniformity of the processing while unfailingly supplying power to a heater electrode for temperature control, and to provide a plasma etching apparatus.SOLUTION: A substrate placement base includes: an insulation member where an electrode for an electrostatic chuck is buried and a heater electrode for temperature control is buried; and a plate member for the temperature control having a medium circulation passage for the temperature control that is used for circulating a medium for the temperature control therein. The substrate placement base further includes: a cylindrical member disposed in a through hole disposed in the plate member for the temperature control and made of an insulation material; and a lead wire positioned in the cylindrical member and having one end connected with the heat electrode for the temperature control and the other end connected with a connection terminal part provided at the lower surface side of the cylindrical member. The substrate placement base and a plasma etching apparatus including the substrate placement base are provided.
申请公布号 JP2013175573(A) 申请公布日期 2013.09.05
申请号 JP20120038734 申请日期 2012.02.24
申请人 TOKYO ELECTRON LTD 发明人 KOIZUMI KATSUYUKI;UEDA TAKEHIRO
分类号 H01L21/3065;H01L21/683 主分类号 H01L21/3065
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