RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A resistive memory device and a fabrication method thereof are provided to reduce thermal attack by fabricating diodes at low temperatures. CONSTITUTION: A variable resistive layer is formed on a semiconductor substrate. A semiconductor substrate forms an infrastructure. A lower electrode (220) is formed on the variable resistive layer. A diode (230) is formed on the lower electrode. An upper electrode (240) is formed on the diode. [Reference numerals] (210) Upper changeable layer; (220) Lower electrode; (232) First electrode; (234) Second electrode; (240) Upper electrode