| 摘要 |
PROBLEM TO BE SOLVED: To reduce a parasitic capacity associated with an insulating capacitor and prevent a decrease in a power transmission efficiency, in a semiconductor relay device.SOLUTION: An insulating capacitor 4a is formed on a dielectric film 36 arranged on a dielectric isolation substrate 30 having a parasitic capacity (Cp). Thereby, a new parasitic capacity Cp' formed between the insulating capacitor 4a and the dielectric isolation substrate 30 can be connected to the conventional parasitic capacity Cp in series. Here, a composite capacity (Cp") of the conventional parasitic capacity Cp and the new parasitic capacity Cp' becomes smaller than the conventional parasitic capacity Cp because the parasitic capacities are connected in series. Accordingly, the parasitic capacity associated with the insulating capacitor can be reduced compared to a conventional case where the insulating capacitor is directly formed on a semiconductor substrate. Thereby, a decrease in a power transmission efficiency can be prevented. |
