PATTERN FORMATION METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a pattern formation method allowing excellent film thickness uniformity and suppressing occurrence of bridge defects and water residue defects, in formation of a fine pattern having a line width of 60 nm or less by an immersion method using an organic developer; an actinic ray-sensitive or radiation-sensitive resin composition used therefor; a resist film; an electronic device-manufacturing method; and an electronic device.SOLUTION: A pattern formation method has steps of: (i) forming a film with an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) whose solubility to a developer comprising an organic solvent is reduced due to increased polarity by the action of an acid, a compound (B) generating an acid by irradiation with an actinic ray or radiation, a solvent (C), and a resin (D) being different from the resin (A) and substantially containing no fluorine atom nor silicon atom; (ii) light-exposing the film; and (iii) developing with a developer comprising an organic solvent to form a negative pattern, where the film formed in the step (i) has a receding contact angle of 70° or more to water.