| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing accumulation of electric charges in a semiconductor layer.SOLUTION: By dry etching through a resist mask 40 of a first layer, there are formed a first contact hole 51 reaching a substrate layer 11 by penetrating an intermediate insulator layer 30, an element separation region 15, and an embedded oxide film layer 12, and a second contact hole 52 reaching an element formation region 16 by penetrating the intermediate insulator layer 30. A deposition layer 60 made of a reactive product having conductivity covers the entire inside wall of the contact holes 51 and 52 and the entire surface of the resist mask 40, and a conductive path is formed running from the element formation region 16 of a semiconductor layer 13 to the substrate layer 11. With the resist mask 40 of the first layer and the deposition layer 60 left as they are, a resist mask 70 of the second layer is formed. By the dry etching through the resist mask of the second layer, third contact holes 81 and 82 reaching the element formation region 16 are formed by penetrating the intermediate insulator layer 30. |
