| 摘要 |
A semiconductor device includes a reverse-conducting insulated gate bipolar transistor (IGBT), wherein the thickness of the semiconductor layer underlying the diode region of the device is thinner than the thickness of the semiconductor layer underlying the IGBT portion of the device. In one aspect, the semiconductor layer is a continuous layer, and trenches defining the anodes in the diode region extend further inwardly of the semiconductor layer than does the base regions of the IGBT portion of the device.
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