发明名称 |
Semiconductor Device and Method of Forming Duplex Plated Bump-On-Lead Pad Over Substrate for Finer Pitch Between Adjacent Traces |
摘要 |
A semiconductor device has a substrate. A first conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the first conductive layer and the substrate. A portion of the insulating over the duplex plated bump on lead pad is removed using a laser direct ablation process. The insulating layer is a lamination layer. The duplex plated bump on lead pad has a wide bump on lead pad. A semiconductor die is mounted over the substrate. The semiconductor die has a composite conductive interconnect structure. The semiconductor die has a first bump and a second bump with a pitch ranging from 90-150 micrometers between the first bump and the second bump. A duplex plated contact pad is formed on a surface of the substrate opposite the duplex plated bump-on-lead pad.
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申请公布号 |
US2013249076(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213424710 |
申请日期 |
2012.03.20 |
申请人 |
LEE SOO WON;LEE KYU WON;JEONG EUN JIN;STATS CHIPPAC, LTD. |
发明人 |
LEE SOO WON;LEE KYU WON;JEONG EUN JIN |
分类号 |
H01L23/498;H01L21/60 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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