发明名称 METHOD OF FORMING A SEMICONDUCTOR DEVICE
摘要 A method includes providing a first mask pattern over a substrate, forming first spacers adjoining sidewalls of the first mask pattern, removing the first mask pattern, forming second spacers adjoining sidewalls of the first spacers, forming a filling layer over the substrate and between the second spacers, and forming a second mask pattern over the substrate.
申请公布号 US2013252425(A1) 申请公布日期 2013.09.26
申请号 US201213428923 申请日期 2012.03.23
申请人 LIN CHIH-HAN;CHANG MING-CHING;CHEN RYAN CHIA-JEN;LIN YIH-ANN;LIN JR-JUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN CHIH-HAN;CHANG MING-CHING;CHEN RYAN CHIA-JEN;LIN YIH-ANN;LIN JR-JUNG
分类号 H01L21/3105;H01L21/306 主分类号 H01L21/3105
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