| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, and a method of manufacturing a semiconductor device, capable of preventing degradation in an L load resistance amount and suppressing punch through while suppressing rising of a threshold value voltage and an on-resistance.SOLUTION: A semiconductor substrate 3 is provided with a step part 40 formed in a groove in such a manner as a bottom part is positioned deeper than an upper end part of a trench 19, in a predetermined width direction region between the trenches 19. Further, on a surface side of a P-type channel layer 17, a groove part 27 formed as a recess to be recessed to a rear surface side is formed at a middle position away from the respective trench 19, being at the middle position in width direction at the step part 40, and in the groove part 27, an insulation layer 29 is embedded. A lower part region of the groove part 27 at the P-type channel layer 17 is configured as a punch through stopper layer 31 which reaches a position deeper than a predetermined depth direction region R. |
