SPIN TRANSISTOR AND MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a spin transistor which has an S value of 60 mV/decade or less and which can inhibit decrease in I/Iratio when a finite bias is applied.SOLUTION: A spin transistor according to a present embodiment comprises: a semiconductor layer including a pregion and an nregion which are arranged away from each other and an i region provided between the pregion and the nregion; a first electrode which is provided on the pregion and includes a first ferromagnetic layer; a second electrode which is provided on the nregion and includes a second ferromagnetic layer; and a gate provided on the i region.