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发明名称
非挥发性半导体记忆体装置及其制造方法
摘要
本发明系关于藉由交替堆叠复数个氧化矽膜及矽膜而在一矽基板上形成一堆叠体,在该堆叠体中形成一沟道,一氧化铝膜、一氮化矽膜及一氧化矽膜系以此顺序形成在该沟道之一内表面上,且在该氧化矽膜上形成一通道矽结晶膜。接着,一氧化矽层系藉由在一氧气环境中执行热处理而形成在该氧化矽膜与该通道矽结晶膜之间之一界面处。
申请公布号
TWI413218
申请公布日期
2013.10.21
申请号
TW098139944
申请日期
2009.11.24
申请人
东芝股份有限公司 日本
发明人
小泽良夫
分类号
H01L21/8247;H01L27/115
主分类号
H01L21/8247
代理机构
代理人
陈长文 台北市松山区敦化北路201号7楼
主权项
地址
日本
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