NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which can be easily manufactured and has a high charge holding capacity.SOLUTION: A nonvolatile semiconductor storage device according to an embodiment comprises: a first columnar body MS1; a conductive connection body 2; a second columnar body MS2; a first selection transistor SDTr; and a second selection transistor SSTr. The first columnar body includes a plurality of first memory cells (MTr1-4) connected in series along a first direction. The second columnar body is provided adjacent to the first columnar body and a plurality of second memory cells (MTr5-8) connected in series along the first direction. The connection body connects one end of the columnar body with one end of the second columnar body on both ends. The first selection transistor includes a first channel layer 11a and one end of the first channel layer is connected to another end of the first columnar body. The second selection transistor includes a second channel layer 11b and one end of the second channel layer is connected to another end of the second columnar body.