发明名称 SIMPLIFIED DEVICES UTILIZING NOVEL PN-SEMICONDUCTOR STRUCTURES
摘要 An electronic or electro-optic device includes a p-type semiconductor layer, an n-type semiconductor layer having a region of contact with the p-type semiconductor layer to provide a p-n junction, a first electrical lead in electrical connection with the p-type semiconductor layer, and a second electrical lead in electrical connection with the n-type semiconductor layer. At least one of the p-type and n-type semiconductor layers includes a doped topological-insulator material having an electrically conducting surface, and one of the first and second electrical leads is electrically connected to the electrically conducting surface of the topological-insulator material.
申请公布号 US2013299780(A1) 申请公布日期 2013.11.14
申请号 US201213471017 申请日期 2012.05.14
申请人 MCQUEEN TYREL M.;COTTINGHAM PATRICK;SHECKELTON JOHN P.;ARPINO KATHRYN;THE JOHNS HOPKINS UNIVERSITY 发明人 MCQUEEN TYREL M.;COTTINGHAM PATRICK;SHECKELTON JOHN P.;ARPINO KATHRYN
分类号 H01L29/06 主分类号 H01L29/06
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