METHODS OF TREATING A MOLD AND FORMING A SOLID LAYER OF A SEMICONDUCTING MATERIAL THEREON

摘要

A method of forming a solid layer of a semiconducting material on an external surface of a treated mold which extends between a leading edge and a trailing edge comprises selectively modifying a temperature gradient of a mold such that a temperature of the leading edge (T1) is less than a temperature of the trailing edge (T2) to form the treated mold. The method further comprises submersing the treated mold into a molten semiconducting material such that the leading edge of the treated mold is first submersed into the molten semiconducting material. The method also comprises withdrawing the treated mold from the molten semiconducting material to form the solid layer of the semiconducting material on the external surface of the treated mold.