发明名称 |
FORMATION METHOD AND STRUCTURE FOR A WELL-CONTROLLED METALLIC SOURCE/DRAIN SEMICONDUCTOR DEVICE |
摘要 |
A device and method for forming a semiconductor device include growing a raised semiconductor region on a channel layer adjacent to a gate structure. A space is formed between the raised semiconductor region and the gate structure. A metal layer is deposited on at least the raised semiconductor region. The raised semiconductor region is silicided to form a silicide into the channel layer which extends deeper into the channel layer at a position corresponding to the space.
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申请公布号 |
US2013299902(A1) |
申请公布日期 |
2013.11.14 |
申请号 |
US201313943143 |
申请日期 |
2013.07.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;SHAHIDI GHAVAM G. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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