| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element in which light output is improved by preventing the diffusion of Al while using a cover electrode structure using Al.SOLUTION: The semiconductor light-emitting element includes a first electrode structure 20 containing Ag and a second electrode structure 30 disposed on a top surface of the first electrode structure 20. The top layer of the first electrode structure 20 is made to be a Ru layer 22, and the bottom layer of the second electrode structure 30 is made to be an Al layer 32. For this reason, light extraction efficiency can be improved while preventing the diffusion of Al. The first electrode structure 20 includes a sequential stack of a Ni layer and a Ti layer between an Ag-containing layer 24 and the Ru layer 22. The second electrode structure 30 is composed of Al. |
