| 摘要 |
PROBLEM TO BE SOLVED: To provide an enhancement-mode gallium nitride-based high electron mobility transistor with reduced traps at an interface between a gate and a channel, an integrated circuit (IC) device, and a manufacturing method thereof.SOLUTION: An embodiment includes: a buffer layer 104 disposed on a substrate 102, the buffer layer including gallium (Ga) and nitrogen (N); a barrier layer 106 disposed on the buffer layer 104, the barrier layer including aluminum (Al) and nitrogen (N), where the barrier layer includes an oxidized portion 110; a gate dielectric 118b disposed on the oxidized portion 110 of the barrier layer 106; and a gate electrode 118a disposed on the gate dielectric 118b. The oxidized portion 110 of the barrier layer 106 is disposed in a gate region between the gate electrode 118a and the buffer layer 104. |
