| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase shift mask blank and a manufacturing method thereof capable of improving a mask service life by improving resistance to light of an optical semitransparent film (a phase shift film) composed of a material having, as main components, silicon, nitrogen, and a transition metal for exposure light of wavelength 200 nm or less, and to provide a phase shift mask.SOLUTION: A phase shift mask blank, used for creating phase shift masks to which ArF excimer laser exposure light is applied, comprises an optical translucent film 2 on a transparent substrate 1. In the phase shift mask blank, the optical translucent film 2 is composed of an incomplete nitride film having, as main components, a transition metal, silicon, and nitrogen, and the content ratio of the transition metal between the transition metal and the silicon in the optical translucent film 2 is less than 9%. |
