| 发明名称 |
Methods of forming secured metal gate antifuse structures |
| 摘要 |
Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device. |
| 申请公布号 |
US8618613(B2) |
申请公布日期 |
2013.12.31 |
| 申请号 |
US201113077681 |
申请日期 |
2011.03.31 |
| 申请人 |
TONG XIANGHONG;CHEN ZHANPING;HAFEZ WALID M.;MA ZHIYONG;KULKARNI SARVESH H.;ZHANG KEVIN X.;PEDERSEN MATTHEW B.;JOHNSON KEVIN D.;INTEL CORPORATION |
发明人 |
TONG XIANGHONG;CHEN ZHANPING;HAFEZ WALID M.;MA ZHIYONG;KULKARNI SARVESH H.;ZHANG KEVIN X.;PEDERSEN MATTHEW B.;JOHNSON KEVIN D. |
| 分类号 |
H01L27/11;H01L21/02;H01L23/52 |
主分类号 |
H01L27/11 |
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