发明名称 |
Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area |
摘要 |
A drift layer of a super junction semiconductor device includes first portions of a first conductivity type and second portions of a second conductivity type opposite to the first conductivity type. The first and second portions are formed both in a cell area and in an edge area surrounding the cell area, wherein an on-state or forward current through the drift layer flows through the first portions in the cell area. At least one of the first and second portions other than the first portions in the cell area includes an auxiliary structure or contains auxiliary impurities to locally reduce the avalanche rate. Locally reducing the avalanche rate increases the total voltage blocking capability of the super junction semiconductor device. |
申请公布号 |
US2014001552(A1) |
申请公布日期 |
2014.01.02 |
申请号 |
US201213539973 |
申请日期 |
2012.07.02 |
申请人 |
HIRLER FRANZ;WEBER HANS;SCHULZE HANS-JOACHIM;WAHL UWE;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HIRLER FRANZ;WEBER HANS;SCHULZE HANS-JOACHIM;WAHL UWE |
分类号 |
H01L29/772;H01L21/20;H01L29/02 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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