| 摘要 |
A semiconductor device includes an n-type first guard ring layer provided between an emitter layer and a collector layer on a surface side of a base layer, and having a higher n-type impurity concentration than the base layer, and an n-type second guard ring layer provided between the first guard ring layer and a buried layer, connected to the first guard ring layer and the buried layer, and having a higher n-type impurity concentration than the base layer. The first guard ring layer has an n-type impurity concentration profile decreasing toward the second guard ring layer side, and the second guard ring layer has an impurity concentration profile decreasing toward the first guard ring layer side. |
