| 摘要 |
A vertical conduction electronic power device includes respective gate, source and drain areas in an epitaxial layer arranged on a semiconductor substrate. The respective gate, source and drain metallizations may be formed by a first metallization level. Corresponding gate, source and drain terminals or pads may be formed by a second metallization level. The power device is configured as a set of modular areas extending parallel to each other, each having a rectangular elongate source area perimetrically surrounded by a narrow gate area. The modular areas are separated from each other by regions with the drain area extending parallel and connected at the opposite ends thereof to a second closed region with the drain area forming a device outer peripheral edge. |
