| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method for a semiconductor substrate capable of evaluating leakage current characteristics of a high-quality wafer used for a product, such as a CCD, a CMOS sensor and the like, to which a high yield is requested, with high accuracy, and to provide a semiconductor substrate and a semiconductor device.SOLUTION: On an EP substrate 1, an EP layer 2 of a conductivity type different from that of the EP substrate 1 is grown. A separation oxide film 9 is formed on the EP layer 2. A well 5 of the same conductivity type as that of the EP layer 2 is formed by ion implantation, and a channel stop layer 10 is formed immediately under the separation oxide film 9 by utilizing cell alignment. A dopant of the conductivity type different from that of the well 5 is diffused in the well 5 to form a pn junction 7 in the well 5. A plurality of cells 20 each using a diffusion layer 6 as one electrode and using a rear face 1a of the EP substrate 1 as the other electrode are formed and used as a TEG. A junction leakage current from two depletion layers of a depletion layer 8 in the well and a depletion layer 4 at an interface between the EP layer 2 and the EP substrate 1 is measured. |
