SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor device capable of preventing a yield decrease due to electrostatic breakdown.SOLUTION: The semiconductor device comprises: a gate electrode layer; a first gate insulating layer on the gate electrode layer; a second gate insulating layer provided on the first gate insulating layer and having a smaller film thickness than the first gate insulating layer; an oxide semiconductor layer on the second gate insulating layer; and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer is a silicon film including nitrogen in which a spin density corresponding to a signal appearing in the Nc center (a g value is 2.003) is 1×10spins/cmor less in Electron Spin Resonance (ESR). The second gate insulating layer is a silicon film including nitrogen having a lower contained hydrogen concentration than the first gate insulating layer.