发明名称 |
FIELD EFFECT TRANSISTORS WITH VARYING THRESHOLD VOLTAGES |
摘要 |
A method including providing a semiconductor substrate including a first semiconductor device and a second semiconductor device, the first and second semiconductor devices including dummy spacers, dummy gates, and extension regions; protecting the second semiconductor device with a mask; removing the dummy spacers from the first semiconductor device; and depositing in-situ doped epitaxial regions on top of the extension regions of the first semiconductor device. |
申请公布号 |
US2014015014(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201213545224 |
申请日期 |
2012.07.10 |
申请人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;REZNICEK ALEXANDER;ADAM THOMAS N.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;REZNICEK ALEXANDER;ADAM THOMAS N. |
分类号 |
H01L21/20;H01L21/336;H01L29/78 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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